Operating Guide for Electrostatic chuck
Operation steps
Environment preparation and equipment inspection to ensure that the vacuum cavity sealing standard operation, and check the electrode lines, He gas circulation and cooling device running state.
Clean surface of chuck, to avoid residual particles affect the flatness of the wafer.
Wafer placement and positioning
The wafer is received by the ejector pin rising. After the wafer enters the cavity, the ejector pin slowly descends to make the wafer come into contact with the surface of the chuck.
Adjust the wafer position, ensure the alignment process area (such as etching graphics area).
Start electrostatic adsorption
Applying a direct current high voltage electrostatic adsorption (usually a QianFuJi), produced by electrode electrostatic field make wafer charge, adsorption form the coulomb force.
Double electrode mode to synchronous load uniformity of the positive and negative voltage in order to enhance the adsorption.
Temperature control and He gas introduction
Helium gas is introduced through the back He flow channel to regulate the temperature on the back of the wafer (typically ranging from -20°C to 150°C) to optimize process uniformity.
Monitor the pressure and flow rate of He gas to ensure heat dissipation efficiency and adsorption stability.
Real-time monitoring of adsorption force feedback signals (such as back He pressure fluctuations) to determine whether the wafer is fully adhered.
Combined with the sensor data to adjust electrostatic voltage or He gas parameters, process temperature changes.
Desorption and removal of wafers
Turn off the electrostatic voltage and eliminate the residual charge through the discharge circuit.
Thimble rises again and cooperate with mechanical arm out wafers, avoid sudden acceleration lead to displacement deviation.
Lint-free rags soaked in isopropyl alcohol (IPA) and deionized water (DI), excess grease and cleaning pads used on site.
Adjustable version of the bipolar ESC can change the surface temperature during perform single formula.
Because of this, the specific formula start and end the ESC setting parameters may be different.
A tunable ESC configuration in the process of the module has additional ESC setting window, namely "maintenance \ ESC".
In the "Maintenance \ESC" window, the setting values of the following parameters can be found:
- ESCChargingTime
- ESCReversePolarityDeclampVoltSetpoint
- ESCReversePolarityDechuckTime
- ESCClampVoltageSetpoint
- ESCHoldingVoltage
- ESCHeOnDelayTime
The "Maintain \ESC" window accepts all the values of the table and automatically adjusts the setting values.
To ESCChargingTime ESCHeOnDelayTime
ESCReversePolarityDeclampVoltSetpoint and
ESCReversePolarityDechuckTime surface temperature based on tunable ESC.
Special is that the correct parameter value is at the beginning, when clamping or loosening of sequence temperature by two area (inside and outside area) in the lower the temperature of the decision.
In the semiconductor manufacturing process, electrostatic chuck not only firmly fix the precision substrate but also provide excellent precise positioning and stability. This performance is crucial for key processes such as photolithography and etching. By using electrostatic chuck, the wafers can be effectively protected, preventing damage to the wafers and thus ensuring the production of high-quality and high-performance chips.
Fountyl Technologies with the headquarter in Singapore, the porous chuck(porous vacuum chuck, microporous ceramic chuck, nano-porous vacuum chuck, silicon carbide porous ceramic chuck, alumina porous ceramic chuck, microporous ceramic vacuum chuck) can be used with Japanese, German, Israeli, American and domestic equipment, with very superior product performance and good one-to-one service.
