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Hoʻohana ʻia ʻo Silicon carbide no nā ʻāpana kū i ka corrosion, nā ʻāpana sila, nā ʻāpana kūpaʻa kiʻekiʻe, nā ala alakaʻi a me nā kaola square.
Loaʻa i ka silikon carbide ceramics nā waiwai mechanical maikaʻi loa i ka mahana maʻamau, e like me ka ikaika kiʻekiʻe, ka paʻakikī kiʻekiʻe, ka modulus elastic kiʻekiʻe, ke kūpaʻa kiʻekiʻe kiʻekiʻe o ka wela, e like me ke kiʻekiʻe thermal conductivity, haʻahaʻa thermal expansion coefficient, a me ka ʻoʻoleʻa kikoʻī maikaʻi a me nā waiwai hoʻoili optical, kūpono loa. no ka hoʻomākaukau ʻana i ka mīkini photolithography a me nā mea hana kaapuni i hoʻohui ʻia no nā ʻāpana hana seramika pololei. E like me ka mea i hoʻohana 'ia i loko o ka photolithography mīkini pololei neʻe workpiece papaʻaina, iwi, suction kīʻaha, ka wai-ʻoluʻolu pā a me ka precision ana aniani, grating a me ka ceramic structural'āpana, Fountyl hou mea ma hope o makahiki o ka 'ike loea, hoʻonā i ka nui nui, lahilahi paia, hollow a me nā ʻano paʻakikī ʻē aʻe o nā ʻāpana hoʻolālā silicon carbide ka hoʻoponopono pololei ʻana a me ka hoʻomākaukau ʻana i nā pilikia, ka haki ʻana i ka bottleneck ʻenehana o kēia ʻano o ka ʻenehana hoʻomākaukau ʻana i nā ʻāpana hana silikon carbide. Ua hoʻolaha nui ia i ka localization o nā ʻāpana structural koʻikoʻi i hoʻohana ʻia i nā lako hana hana kaapuni.
● Silicon carbide ceramics nui loa i pressureless sintering silikon carbide (SSiC), reaction-sintered silikon carbide (RBSC), kemika mahu hoʻoheheʻe silika carbide (CVD-SiC).
● Silicon carbide loaʻa nā ʻano waiwai maikaʻi loa: super paʻakikī, ʻaʻahu kūʻē, kiʻekiʻe thermal conductivity a me ka ikaika mechanical, haʻahaʻa thermal hoʻonui coefficient, maikaʻi thermal paʻa, haʻahaʻa haʻahaʻa, kiʻekiʻe kiko'ī stiffness, non-magnetic.
● I kēia manawa, hoʻohana ʻia ka silicon carbide ceramics i nā ʻoihana like ʻole e like me ka mokulele, aerospace a me ka ʻoihana nuklea, e like me nā ʻāpana ceramic o nā mea hana kiʻekiʻe no ka silicon carbide ceramic reflector a me ka IC integrated circuit manufacturing, nā mea hoʻololi wela a me nā mea pale ma lalo o nā kūlana koʻikoʻi.
Nā hiʻohiʻona o nā ʻāpana hana seramika pololei no nā lako hana hana kaapuni i hoʻohui ʻia:
① Māmā loa: I mea e hōʻemi ai i ka neʻe inertia, hoʻemi i ka ukana kaʻa, hoʻomaikaʻi i ka pono o ka neʻe, hoʻonohonoho pololei a kūpaʻa, hoʻohana maʻamau nā ʻāpana hana i ka hoʻolālā hale māmā, ʻo 60-80% ka māmā a hiki i 90%;
② ʻO ke kūlana kūlana kiʻekiʻe: I mea e hoʻokō ai i ka neʻe kiʻekiʻe a me ka hoʻonohonoho ʻana, pono nā ʻāpana kūkulu e loaʻa i ke ʻano kiʻekiʻe kiʻekiʻe a me ka pololei o ke kūlana, pono ka palahalaha, parallelism a me ka perpendicularity e emi iho ma mua o 1μm, a me ke ʻano a me ke ʻano. Pono ka pololei o ke kūlana ma lalo o 5μm.
③ Ke kūpaʻa kiʻekiʻe: I mea e hoʻokō ai i ka neʻe kiʻekiʻe a me ka hoʻonohonoho ʻana, pono nā ʻāpana hana i ke kūpaʻa kiʻekiʻe kiʻekiʻe, ʻaʻole e hana i ke koʻikoʻi, a me ka conductivity thermal kiʻekiʻe, haʻahaʻa haʻahaʻa haʻahaʻa hoʻonui, ʻaʻole maʻalahi e hana i ka deformation nui. ;
④ Maʻemaʻe a me ka haumia ʻole. Pono nā ʻāpana hoʻolālā e loaʻa i ka coefficient friction haʻahaʻa loa, liʻiliʻi ka nalowale o ka ikehu kinetic i ka wā o ka neʻe ʻana, a ʻaʻohe pollution particle wili. Silicon carbide mea he loa kiʻekiʻe elastic modulus, thermal conductivity a me ka haʻahaʻa thermal hoʻonui coefficient, ʻaʻole maʻalahi ka hana ʻana i ka deformation koʻikoʻi bending a me ke koʻikoʻi wela, a he polishability maikaʻi loa, hiki ke hana ʻia i ke aniani maikaʻi loa; No laila, He mea maikaʻi loa ka hoʻohana ʻana i ka silicon carbide e like me ka mea kikoʻī kikoʻī no nā lako kī o nā kaapuni i hoʻohui ʻia e like me ka mīkini photolithography, ʻo Silicon carbide ka maikaʻi o ka paʻa kemika maikaʻi, ka ikaika mechanical kiʻekiʻe, ka conductivity thermal kiʻekiʻe a me ka coefficient hoʻonui haʻahaʻa. a hiki ke hoʻohana ʻia i ka wela kiʻekiʻe, ke kaomi kiʻekiʻe, ka corrosion a me ka radiation o nā kaiapuni koʻikoʻi.
Loaʻa i ka Silicon carbide ka maikaʻi o ka paʻa kemika maikaʻi, ka ikaika mechanical kiʻekiʻe, ka conductivity thermal kiʻekiʻe a me ka coefficient hoʻonui haʻahaʻa haʻahaʻa, a hiki ke hoʻohana ʻia i ka wela kiʻekiʻe, ke kaomi kiʻekiʻe, ka ʻino a me ka radiation o nā kaiapuni.
Pono nā mea hana nui o ka circuit circuit e loaʻa i nā mea ʻāpana nā hiʻohiʻona o ke kaumaha māmā, ka ikaika kiʻekiʻe, ka conductivity thermal kiʻekiʻe a me ka coefficient hoʻonui haʻahaʻa haʻahaʻa, a he paʻa a ʻaʻahu me ka ʻole o nā hemahema. Pono nā ʻāpana e loaʻa ka pololei kiʻekiʻe kiʻekiʻe a me ke kūpaʻa dimensional e hōʻoia i ka neʻe ʻana o ka ultra-precision a me ka hoʻomalu ʻana i nā mea hana. ʻO ka silikon carbide ceramics he modulus elastic kiʻekiʻe a me ka ʻoʻoleʻa kikoʻī, ʻaʻole maʻalahi i ka deform, a he kiʻekiʻe thermal conductivity a haʻahaʻa haʻahaʻa hoʻonui hoʻonui ʻia, kiʻekiʻe thermal stability, no laila, ʻo ka silicon carbide ceramics he mea hoʻolālā maikaʻi loa, i kēia manawa i ka hana kaapuni i hoʻohui ʻia. ʻO nā lako kī nui e loaʻa ai ka nui o nā noi, e like me ka mīkini lithography me ka papa hana silicon carbide, alakaʻi alakaʻi, reflector, ceramic chuck, a me ka hopena hopena ceramic.
Hiki iā Fountyl ke hālāwai me ka mīkini photolithography ma ke ʻano he ʻelele o ka mīkini hana kīwī i hoʻohui ʻia me ka nui nui, ka paia ākea ākea, ka paʻakikī paʻakikī, ka ʻenehana hoʻomākaukau ʻana i ka silicon carbide structural parts, e like me: silicon carbide vacuum chuck, alakaʻi alakaʻi, reflector, papa hana. a me kahi pūʻulu o nā ʻāpana hoʻolālā silicon carbide no ka mīkini photolithography.
| Waiwai | Fountyl | ||
| ʻO ka mānoanoa（g/cm3) | 2.98-3.02 | ||
| ʻO Young's Modulus（GPa） | 368 | ||
| Ka ikaika wiliwili（MPa） | 334 | ||
| Weibull | 8.35 | ||
| CTE（×10-6/℃） | 100 ℃ | 2.8×10-6 | |
| 400 ℃ | 3.6×10-6 | ||
| 800 ℃ | 4.2×10-6 | ||
| 1000 ℃ | 4.6×10-6 | ||
| ʻO ka hoʻoili wela (W/m·k) (20 ºC) | 160-180 | ||
| Lakiō o Poisson | 0.187 | ||
| Modulus shear(GPa) | 155 | ||